![]() 2N3904 Pinoutīelow is the pinout of the 2N3904 with the notation scheme: ![]() Exposure to limiting values for extended periods of time may affect the reliability of the device. Operation of the device under these or any other conditions exceeding the values specified in the “Specifications” sections is not implied. Exceeding one or more of the limit values may result in permanent damage to the device. Limits are given according to the absolute maximum rating system (IEC 134). Current transfer ratio bandwidth: 300 MHz.The current amplification factor of a transistor ( hfe): 100 to 300.Collector power dissipated, max: 0.625 W.Collector-emitter voltage, not more: 40 В.In the technical documentation of the 2N3904, the following data is written: ![]() To turn on a PNP transistor, the base must be more negative than the emitter, and to turn it off, the base must be more positive than the emitter.3 2N3904 Alternatives The Characteristics of the 2N3904 Transistor In a PNP transistor, the base-emitter junction is forward-biased and the collector-base junction is reverse-biased.īiasing: PNP transistors are biased in the opposite direction to NPN transistors. Voltage levels: The voltage levels in a PNP transistor are opposite to those in an NPN transistor. This is called amplification or gain, and it makes the PNP transistor useful as an electronic switch or amplifier. The emitter is negative relative to the base, and the collector is positive relative to the base.Ĭurrent flow: When a small current is applied to the base terminal, it allows a much larger current to flow from the emitter to the collector. Polarity: In a PNP transistor, the majority charge carriers are holes, which flow from the emitter to the collector. Structure: A PNP transistor has a sandwich-like structure, consisting of a thin P-type layer (base) sandwiched between two N-type layers (emitter and collector). Here are characteristics of PNP transistors: ![]() The 2N3906 is 40V, 200mA, PNP switching transistor made by NXP Semiconductors.īrief overview of the content in a 2N3906 PDF fileĭISCRETE SEMICONDUCTORS DATA SHEET book halfpage M3D186 2N3906 PNP switching transistor Product speci cation Supersedes data of 1997 Apr 23 Philips Semiconductors Product speci cation PNP switching transistor FEATURES Low current max 200 mA Low voltage max 40 V APPLICATIONS High speed switching in industrial applications DESCRIPTION PNP switching transistor in a TO 92 SOT54 plastic package NPN complement 2N3904 PINNING PIN 1 2 3 collector base emitter 2N3906 DESCRIPTION 1 handbook halfpage 2 3 1 2 3 MAM280 Fig 1 Simplified outline TO 92 SOT54 and symbol LIMITING VALUES In accordance with the Absolute Maximum Rating System IEC 134 SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector base voltage collector emitter voltage emitter base voltage collector current DC peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C open emitter open base open collector CONDITIONS 65 65 MIN MAX 40 40 6 200 300 100 500 150 150 150 UNIT V V V mA mA mA mW C C C 1999 Apr 23 2 Philips Semiconductors Product speci cation PNP switching 2N3906 - 40V, 200mA, PNP switching transistor ![]()
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